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Thyristor Modules Thyristor/Diode Modules
Preliminary Data Sheet
PSKT 56 PSKH 56
ITRMS ITAVM VRRM
= 2 x 100 A = 2 x 64 A = 800-1800 V
1 2 3 6 7 4
TO-240 AA
5
VRSM VDSM V 900 1300 1500 1700 1900
VRRM VDRM V 800 1200 1400 1600 1800
Type Version 1 PSKT PSKT PSKT PSKT PSKT 56/08io1 56/12io1 56/14io1 56/16io1 56/18io1 PSKH 56/08io1 PSKH 56/12io1 -PSKH 56/16io1 -Version 8 PSKT PSKT PSKT PSKT PSKT 56/08io8 56/12io8 56/14io8 56/16io8 56/18io8 PSKH 56/08io8 PSKH 56/12io8 PSKH 56/14io8 PSKH 56/16io8 PSKH 56/18io8
3
67 1
542
PSKT Version 1
3 1 5 42
Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM
Test Conditions TVJ = TVJM TC = 83C; 180 sine TC = 85C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 100 64 60 1500 1600 1350 1450 11 200 10 750 9100 8830 150 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 A A A A A A A A 2s A 2s A 2s A 2s A/s
PSKH Version 1
3 61 52
PSKT Version 8
3 1 52
i2dt
TVJ = 45C VR = 0 TVJ = TVJM VR = 0
PSKH Version 8
(di/dt)cr
TVJ = TVJM repetitive, IT = 150 A f =50 Hz, tP =200 s VD = 2/3 VDRM IG = 0.45 A non repetitive, IT = ITAVM diG/dt = 0.45 A/s TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 s tP = 300 s
Features A/s V/s W W W V C C C V~ V~ Applications

(dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight

International standard package, JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Gate-cathode twin pins for version 1
50/60 Hz, RMS IISOL 1 mA
t = 1 min t=1s
3000 3600
DC motor control Softstart AC motor controller Light, heat and temperature control
Mounting torque (M5) Terminal connection torque (M5) Typical including screws
2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. 90 g
Advantages

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Space and weight savings Simple mounting with two screws Improved temperature and power cycling capability Reduced protection circuits
2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Symbol IRRM, IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a
Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, IF = 200 A; TVJ = 25C
Characteristic Values 5 1.57 0.85 3.7 1.5 1.6 100 200 0.2 10 450 200 2 typ. 150 100 24 other values see Fig. 8/9 0.45 0.225 0.65 0.325 12.7 9.6 50 mA V V m V V mA mA V mA mA
VG
10 1: IGT, TVJ = 125C
V
2: IGT, TVJ = 25C 3: IGT, TVJ = -40C
For power-loss calculations only (TVJ = 125C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ TVJ TVJ TVJ = = = = 25C -40C 25C -40C
1 1
2
3 5 4
6
VD = 2/3 VDRM
TVJ = 25C; tP = 10 s; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/s TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 0.45 A; diG/dt = 0.45 A/s TVJ = TVJM; IT = 150 A, tP = 200 s; -di/dt = 10 A/s VR = 100 V; dv/dt = 20 V/s; VD = 2/3 VDRM TVJ = TVJM; IT, IF = 50 A, -di/dt = 3 A/s per per per per thyristor/diode; DC current module thyristor/diode; DC current module
4: PGAV = 0.5 W IGD, TVJ = 125C 5: PGM = 5W 6: PGM = 10 W 102 103 IG
mA s s
0.1 100
101
mA 104
Fig. 1 Gate trigger characteristics
1000
C A K/W K/W K/W K/W mm mm m/s 2
tgd
TVJ = 25C
s
typ.
100
Limit
Creepage distance on surface Strike distance through air Maximum allowable acceleration
10
1 10
100
mA IG
1000
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394") PSKT/PSKH Version 1 PSKT Version 8 PSKH Version 8
2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration
Fig. 4 i2dt versus time (1-10 ms)
Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode)
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
Circuit B6 3 x PSKT 56 or 3 x PSKH 56
2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature
Circuit W3 3 x PSKT 56 or 3 x PSKH 56
PSKT 56 PSKH 56 Z thJC(t)
Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.45 0.47 0.49 0.505 0.52
Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.014 0.026 0.41 ti (s) 0.015 0.0095 0.175
PSKT 56 PSKH 56 ZthJK(t)
Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.65 0.67 0.69 0.705 0.72
Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.014 0.026 0.41 0.2 ti (s) 0.015 0.0095 0.175 0.67
POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions

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